Schottky-barrier double-walled carbon nanotube field-effect transistors

TL;DR

This paper studies Schottky-barrier FETs based on double-walled carbon nanotubes, revealing unique electronic transport properties, asymmetries, and an enhanced effective band gap due to the metallic inner shell.

Contribution

It introduces the analysis of double-walled carbon nanotube FETs with a metallic inner shell, highlighting their distinct transport characteristics and increased band gap.

Findings

Asymmetries in I-V characteristics and threshold voltages observed.

Metallic inner shell induces a significantly larger effective band gap.

Enhanced electronic properties compared to single-walled nanotube FETs.

Abstract

We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show asymmetries of the $I$-$V$ characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner shell induces a large effective band gap, which is one order of magnitude larger than that due to the semiconducting shell alone of a single-walled carbon nanotube FET.