Control of optical emission in doped GaAs/AlGaAs nanofabricated quantum dots

TL;DR

This paper demonstrates that high-quality GaAs/AlGaAs quantum dots fabricated via nanolithography exhibit tunable optical emission properties, with potential applications in optoelectronics requiring precise emission control.

Contribution

It introduces a fabrication method for homogeneous quantum dot arrays with controllable optical properties based on geometry and doping.

Findings

Quantum dots show emission energies linked to size and doping.

Emission linewidths are consistent across the array.

Activation energy for excitonic emissions is about 2 meV.

Abstract

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Excitonic-like and biexcitonic-like emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated QDs for applications in areas that require fine control of optical emission.