Weak localization in ferromagnetic (Ga,Mn)As nanostructures

TL;DR

This paper reports the observation of weak localization effects in (Ga,Mn)As nanostructures at very low temperatures, highlighting phase coherence and spin-orbit interactions in ferromagnetic semiconductors.

Contribution

First observation of weak localization in (Ga,Mn)As nanowires, revealing phase coherence lengths and spin-orbit effects at millikelvin temperatures.

Findings

Phase coherence length between 100 nm and 200 nm at 20 mK

Presence of weak anti-localization due to strong spin-orbit interaction

Weak localization observed in ferromagnetic (Ga,Mn)As nanostructures

Abstract

We report on the observation of weak localization in arrays of (Ga,Mn)As nanowires at millikelvin temperatures. The corresponding phase coherence length is typically between 100 nm and 200 nm at 20 mK. Strong spin-orbit interaction in the material is manifested by a weak anti-localization correction around zero magnetic field.