Fabrication of Nano-Gapped Single-Electron Transistors for Transport Studies of Individual Single-Molecule Magnets

TL;DR

This paper reports the fabrication of nano-gapped single-electron transistors using advanced lithography and electromigration techniques, enabling detailed transport studies of individual single-molecule magnets.

Contribution

It introduces a novel fabrication method for nano-gapped transistors tailored for single-molecule magnet transport analysis.

Findings

Demonstrated Coulomb blockade in single Mn12 SMM

Achieved 1-3 nm gaps suitable for SMM placement

Observed excitations within +/- 40 meV

Abstract

Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn12(3-thiophenecarboxylate) displays the coulomb blockade effect with several excitations within +/- 40 meV.