High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-\delta}

TL;DR

This study investigates the high-field electrical transport properties of electron-doped Pr$_{2-x}$Ce$_x$CuO$_{4-\delta}$ films, revealing unique non-linear Hall resistivity and magnetoresistance behaviors explained by a spin density wave model.

Contribution

It provides new insights into the magnetic field dependence of transport properties in electron-doped cuprates, highlighting differences from hole-doped counterparts.

Findings

Non-linear Hall resistivity at high magnetic fields.

Crossover from quadratic to linear magnetoresistance.

Qualitative explanation via spin density wave Fermi surface reconstruction.

Abstract

We report resistivity and Hall effect measurements in electron-doped Pr$_{2-x}$Ce$_{x}$CuO$_{4-\delta}$ films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising non-linear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also observe a crossover from quadratic to linear field dependence of the positive magnetoresistance in the overdoped films. A spin density wave induced Fermi surface reconstruction model can be used to qualitatively explain both the Hall effect and magnetoresistance.