MBE growth of cubic AlxIn1-xN and AlxGayIn1-x-yN lattice matched to GaN

TL;DR

This paper reports the growth of lattice-matched cubic AlxIn1-xN and AlxGayIn1-x-yN heterostructures on GaN using plasma-assisted molecular beam epitaxy, enabling independent control of band gap and lattice parameters for optoelectronic applications.

Contribution

It demonstrates the successful growth and characterization of ternary and quaternary cubic alloys with independent band gap and lattice control, expanding material options for GaN-based devices.

Findings

Alloy compositions were accurately measured by EDX and RBS.

Lattice parameters were verified to match GaN using X-ray reciprocal space mapping.

The growth process was optimized at 620°C for different alloy compositions.

Abstract

Ternary and quaternary cubic c-AlxIn1-xN/GaN and c-AlxGayIn1-x-y/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molecular beam epitaxy. The c-AlxGayIn1-x-y alloy permits the independent control of band gap and lattice parameter. The ternary and quaternary films were grown at 620 C. Different alloy compositions were obtained by varying the Al and Ga fluxes. The alloy composition was measured by Energy Dispersive X-ray Spectroscopy (EDX) and Rutherford Backscattering Spectrometry (RBS). X-ray reciprocal space map of asymmetric (-1-13) reflex were used to measure the lattice parameters and to verify the lattice match between the alloy and the c-GaN buffer.