Analytical formula and measurement technique for the built-in potential of practical diffused semiconductor junctions

TL;DR

This paper presents a new analytical formula for the built-in potential of diffused semiconductor junctions derived from Gauss's law, along with a measurement technique for practical determination of this voltage.

Contribution

It introduces a novel integral formula for the built-in potential and a corresponding measurement method for practical applications.

Findings

Derived a new integral formula for built-in potential

Developed a measurement technique for practical voltage determination

Validated the formula and method through experiments

Abstract

Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of diffused semiconductor junctions. The measurement technique for the determination of the built-in voltage is also described.