Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors

TL;DR

This paper investigates the spin-dependent transport in GaMnAs-based spin hot-carrier transistors, revealing high current transfer ratios, current gain, and oscillatory tunneling magnetoresistance due to resonant tunneling effects.

Contribution

It presents the first detailed analysis of spin transport and tunneling magnetoresistance oscillations in GaMnAs-based SSHCTs, demonstrating their potential for spintronic applications.

Findings

Current transfer ratio alpha = 0.8-0.95

Current gain beta = 1-10

Oscillatory TMR ratio with bias due to resonant tunneling

Abstract

We have investigated the spin-dependent transport properties of GaMnAs-based three-terminal semiconductor spin hot-carrier transistor (SSHCT) structures. The emitter-base bias voltage VEB dependence of the collector current IC, emitter current IE, and base current IB shows that the current transfer ratio alpha (= IC / IE) and the current gain beta (= IC / IB) are 0.8-0.95 and 1-10, respectively, which means that GaMnAs-based SSHCTs have current amplifiability. In addition, we observed an oscillatory behavior of the tunneling magnetoresistance (TMR) ratio with the increasing bias, which can be explained by the resonant tunneling effect in the GaMnAs quantum well.