Interminiband Rabi oscillations in biased semiconductor superlattices

TL;DR

This paper investigates the dynamics of carrier oscillations in biased semiconductor superlattices, demonstrating Rabi oscillations caused by interference effects and simulating direct Rabi oscillations across multiple minibands at high fields.

Contribution

It provides the first explicit demonstration of the resonant nature of interminiband Rabi oscillations and simulates complex three-miniband Rabi oscillations in high field regimes.

Findings

Rabi oscillations arise from interference of intrawell and Bloch oscillations.

Resonant Rabi oscillations are explicitly demonstrated.

Simulation of three-miniband Rabi oscillations at high fields.

Abstract

Carrier dynamics at energy level anticrossings in biased semiconductor superlattices, was studied in the time domain by solving the time-dependent Schroedinger equation. The resonant nature of interminiband Rabi oscillations has been explicitly demonstrated to arise from interference of intrawell and Bloch oscillations. We also report a simulation of direct Rabi oscillations across three minibands, in the high field regime, due to interaction between three strongly coupled minibands.