A Generic Model for Current Collapse in Spin Blockaded Transport

TL;DR

This paper introduces a generic model explaining negative differential resistance in spin blockaded transport through quantum dots, highlighting the roles of orbital energy, delocalization, and Coulomb interaction.

Contribution

The paper presents a new generic model for current collapse in spin blockaded transport, applicable to many-electron systems in quantum dots, with a simple criterion for NDR observation.

Findings

Model accurately describes multiple NDRs in experiments

Delicate interplay of orbital energy, delocalization, Coulomb interaction causes NDR

Provides a useful framework for understanding spin blockaded transport phenomena

Abstract

A decrease in current with increasing voltage, often referred to as negative differential resistance (NDR), has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently been reported in nanoscale devices with large single-electron charging energies which require a many-electron picture in Fock space. This paper presents a generic model in this transport regime leading to a simple criterion for the conditions required to observe NDR and shows that this model describes the recent observation of multiple NDR's in Spin Blockaded transport through weakly coupled-double quantum dots quite well. This model shows clearly how a delicate interplay of orbital energy offset, delocalization and Coulomb interaction lead to the observed NDR under the right conditions, and also aids in obtaining a good match with experimentally observed features. We believe the basic model could be useful in understanding other experiments in this transport regime as well.