MBE Growth of Cubic InN

TL;DR

This paper reports the growth of nearly phase-pure cubic InN films on c-GaN buffers using rf-plasma assisted MBE, analyzing their structural and optical properties across different growth temperatures.

Contribution

It demonstrates the successful growth of cubic InN with minimal hexagonal inclusions and characterizes its structural and optical properties, advancing cubic InN film fabrication.

Findings

Cubic InN films are nearly phase-pure with small hexagonal inclusions.

Hexagonal inclusions decrease with lower growth temperatures.

Band gap of cubic InN is approximately 0.61 eV.

Abstract

Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite (hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum (FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence measurements reveal a band gap of about 0.61eV for cubic InN.