Surface-acoustic-wave-driven luminescence from a lateral p-n junction
J. R. Gell, P. Atkinson, S. P. Bremner, F. Sfigakis, M. Kataoka, D., Anderson, G. A. C. Jones, C. H. W. Barnes, D. A. Ritchie, M. B. Ward, C. E., Norman, and A. J. Shields
TL;DR
This paper demonstrates surface-acoustic-wave-driven luminescence from a lateral p-n junction in GaAs/AlGaAs quantum wells, highlighting its potential for quantum computing and cryptography applications.
Contribution
It introduces a novel surface-acoustic-wave-driven luminescence technique from a lateral p-n junction with high mobility and scalability.
Findings
Peak electrical current and light emission at resonant frequency
Demonstration of surface-acoustic-wave transport in quantum wells
Potential for single-photon applications in quantum technologies
Abstract
The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.
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