Nuclear spin diffusion in the semiconductor TlTaS3

TL;DR

This study investigates nuclear spin diffusion in TlTaS3 using NMR, revealing two relaxation mechanisms and providing estimates for the spin diffusion coefficient, advancing understanding of spin dynamics in this semiconductor.

Contribution

It presents the first detailed NMR analysis of spin diffusion in TlTaS3, identifying dominant relaxation mechanisms and quantifying the spin diffusion coefficient.

Findings

Spin-lattice relaxation is driven by thermally activated carriers and localized electron spins.

At low temperatures, spin diffusion limits relaxation.

The spin diffusion coefficient was estimated from experimental data.

Abstract

We report on a 203Tl and 205Tl nuclear magnetic resonance study of the chain ternary semiconductor TlTaS3. We show that spin-lattice relaxation in this compound is driven by two contributions, namely by interactions of nuclear spins with thermally activated carriers and with localized electron spins. The latter mechanism dominates at lower temperature; at that, our measurements provide striking manifestation of the spin-diffusion-limited relaxation regime. The experimental data obtained allow us to estimate the spin diffusion coefficient.