Resonant Rayleigh Scattering in Ordered and Intentionally Disordered Semiconductor Superlattices
V. Bellani, M. Amado, E. Diez, C. Koerdt, M. Potemski, R. Hey

TL;DR
This paper experimentally investigates how ordered and disordered potential profiles in GaAs-AlGaAs superlattices affect resonant Rayleigh scattering, revealing disorder's impact on exciton dephasing and localization under magnetic fields.
Contribution
It provides new insights into how intentional disorder influences exciton behavior and scattering in semiconductor superlattices, with tunable localization via magnetic fields.
Findings
Disorder modifies exciton dephasing energy dispersion.
Magnetic field tunes in-plane exciton localization.
Disorder affects Rayleigh scattering characteristics.
Abstract
We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows the continuous tuning of the in plane exciton localization and to study the interplay between the in plane and vertical disorder.
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