Negative Spin Valve effects in manganite/organic based devices
A. Riminucci, I. Bergenti, L. E. Hueso, M. Murgia, C. Taliani, Y., Zhan, F. Casoli, M. P. de Jong, V. Dediu

TL;DR
This study demonstrates negative spin valve effects in manganite/organic devices, revealing electron-dominated transport and interface effects that influence magnetoresistance and bias asymmetry.
Contribution
It provides the first detailed analysis of negative spin valve effects in manganite/organic devices, highlighting the role of interface dipoles and energy level alignment in these phenomena.
Findings
Negative spin valve effect observed below 210 K
Interface dipole aligns Fermi level with LUMO, favoring electron transport
Voltage asymmetry strongly influences magnetoresistance
Abstract
We report detailed investigations of hybrid organic-inorganic vertical spin valves. Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3) organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as the bottom electrode and Co as the top electrode. While manganite was directly connected to the organic semiconductor layer, a thin tunnel barrier was placed between the OS and the Co electrode. A clear negative spin valve effect - low resistance for antiparallel electrodes configuration - was observed below 210 K in various devices using two different tunnel barriers: LiF and Al2O3. The magnetoresistance effect was found to be strongly asymmetric with respect to the bias voltage. Photoelectron Spectroscopy (PES) investigation of the interface between manganite and Alq3 revealed a strong interface dipole, which leads to a better matching of the metal Fermi level…
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Taxonomy
TopicsMagnetic and transport properties of perovskites and related materials · Electrical and Thermal Properties of Materials · Electronic and Structural Properties of Oxides
