Graphene Nano-Ribbon Electronics

TL;DR

This paper reports on the fabrication and electrical characterization of graphene nano-ribbon transistors, revealing how their resistivity and quantum confinement effects depend on ribbon width, with implications for nano-electronic device design.

Contribution

It introduces a detailed experimental study of graphene nano-ribbons, highlighting the relationship between width, resistivity, and quantum confinement effects, which was not previously well-characterized.

Findings

Resistivity increases as ribbon width decreases

Quantum confinement gap opens in narrow ribbons

Low-frequency noise dominated by 1/f noise

Abstract

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.