Nuclear Spins as Quantum Memory in Semiconductor Nanostructures

TL;DR

This paper theoretically analyzes the potential of semiconductor nuclear spins as long-lived quantum memories, calculating their coherence times and fidelity under various conditions using advanced cluster expansion techniques.

Contribution

It provides the first detailed theoretical calculation of nuclear spin coherence times and fidelity in semiconductor nanostructures considering realistic bath environments and pulse sequences.

Findings

High-fidelity quantum memory possible for 100 microseconds in GaAs:P

Nuclear spin coherence times of 1-2 milliseconds in natural silicon

CPMG pulse sequences significantly extend nuclear spin coherence times

Abstract

We theoretically consider solid state nuclear spins in a semiconductor nanostructure environment as long-lived, high-fidelity quantum memory. In particular, we calculate, in the limit of a strong applied magnetic field, the fidelity versus time of P donor nuclear spins in random bath environments of Si and GaAs, and the lifetime of excited intrinsic spins in polarized Si and GaAs environments. In the former situation, the nuclear spin dephases due to spectral diffusion induced by the dipolar interaction among nuclei in the bath. We calculate the decay of nuclear spin quantum memory in the context of Hahn and Carr-Purcell-Meiboom-Gill (CPMG) refocused spin echoes using a formally exact cluster expansion technique which has previously been successful in dealing with electron spin dephasing in a solid state nuclear spin bath. With decoherence dominated by transverse dephasing (T2), we find it feasible to maintain high fidelity (losses of less than 10^{-6}) quantum memory on nuclear spins for times of the order of 100 microseconds (GaAs:P) and 1 to 2 milliseconds (natural Si:P) using CPMG pulse sequences of just a few (~2-4) applied pulses. We also consider the complementary situation of a central flipped intrinsic nuclear spin in a bath of completely polarized nuclear spins where decoherence is caused by the direct flip-flop of the central spin with spins in the bath. Exact numerical calculations that include a sufficiently large neighborhood of surrounding nuclei show lifetimes on the order of 1-5 ms for both GaAs and natural Si. Our calculated nuclear spin coherence times may have significance for solid state quantum computer architectures using localized electron spins in semiconductors where nuclear spins have been proposed for quantum memory storage.