Probing pairing symmetry of Sm_{1.85}Ce_{0.15}CuO_4 via highly-sensitive voltage measurements: Evidence for strong impurity scattering
A.J.C. Lanfredi, S. Sergeenkov, F.M. Araujo-Moreira

TL;DR
This study uses sensitive voltage measurements to analyze the magnetic penetration depth in optimally-doped Sm_{1.85}Ce_{0.15}CuO_4 thin films, revealing d-wave pairing symmetry influenced by strong impurity scattering.
Contribution
It provides experimental evidence for d-wave pairing symmetry in electron-doped cuprates through detailed penetration depth measurements and analysis of impurity effects.
Findings
Linear temperature dependence of penetration depth at low T
Quadratic behavior above 0.22T_C indicating impurity scattering
Estimated nodal gap and impurity scattering rate values
Abstract
Using a highly-sensitive home-made mutual-inductance technique, temperature profiles of the magnetic penetration depth in the optimally-doped thin films have been extracted. The low-temperature behavior of is found to be best-fitted by linear and quadratic laws above and below , respectively, which clearly indicates the presence of d-wave pairing mechanism dominated by strong paramagnetic scattering at the lowest temperatures. The best fits produce and for the estimates of the nodal gap parameter and impurity scattering rate.
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