Influence of inelastic relaxation time on intrinsic spin Hall effects in a disordered two-dimensional electron gas
Pei Wang, You-Quan Li

TL;DR
This paper investigates how inelastic relaxation time affects the intrinsic spin Hall effect in a disordered 2D electron gas with Rashba interaction, revealing non-vanishing spin Hall conductivity even with minimal impurities.
Contribution
It demonstrates that inelastic scattering prevents the vanishing of spin Hall conductivity as impurity concentration decreases, clarifying impurity effects in disordered systems.
Findings
Spin Hall conductivity remains finite with decreasing impurity concentration.
Inelastic scattering plays a crucial role in the intrinsic spin Hall effect.
Proposes measuring spin accumulation at different ratios to verify effects.
Abstract
The influence of inelastic relaxation time on the intrinsic spin Hall effects in a disordered two-dimensional electron gas with Rashba interaction is studied, which clarifies the controversy of impurity effects in the system. We reveal that, due to the existence of inelastic scattering, the spin Hall conductivity does not vanish when the impurity concentration diminishes to zero no matter it is non-magnetically or magnetically disordered. The spin accumulation is evaluated by using the obtained spin Hall conductivity, and an alternate route is suggested to verify the intrinsic spin Hall effect by measuring the spin accumulation at different ratios.
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Taxonomy
TopicsQuantum and electron transport phenomena · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
