Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As

TL;DR

This paper numerically investigates the domain-wall resistance in ferromagnetic semiconductor (Ga,Mn)As using Landauer-Buttiker formalism, considering full valence band structure and disorder effects, providing theoretical predictions and comparisons with experiments.

Contribution

It introduces a comprehensive numerical model for domain-wall resistance in (Ga,Mn)As that includes full band structure and disorder effects, advancing understanding of spin transport.

Findings

Predicted domain-wall resistance magnitude without disorder.

Analyzed effects of small and large disorder regimes.

Compared theoretical predictions with experimental data.

Abstract

We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance without disorder and compare it to experimental values. Next we add disorder to the model and study numerically both small and large disorder regime.