Valence-band mixing in first-principles envelope-function theory
Bradley A. Foreman

TL;DR
This paper implements a first-principles envelope-function theory to accurately model valence-band mixing in semiconductor superlattices, capturing complex effects like Rashba coupling and interface contributions.
Contribution
It provides a numerical implementation of a recently developed first-principles envelope-function approach, including detailed treatment of operator ordering and interface effects.
Findings
Accurate valence subband structure reproduction over wide energy ranges.
Identification of complex operator ordering in the kinetic-energy operator.
Significant contributions of interface mixing and dipole terms to ground state splitting.
Abstract
This paper presents a numerical implementation of a first-principles envelope-function theory derived recently by the author [B. A. Foreman, Phys. Rev. B 72, 165345 (2005)]. The examples studied deal with the valence subband structure of GaAs/AlAs, GaAs/Al(0.2)Ga(0.8)As, and In(0.53)Ga(0.47)As/InP (001) superlattices calculated using the local density approximation to density-functional theory and norm-conserving pseudopotentials without spin-orbit coupling. The heterostructure Hamiltonian is approximated using quadratic response theory, with the heterostructure treated as a perturbation of a bulk reference crystal. The valence subband structure is reproduced accurately over a wide energy range by a multiband envelope-function Hamiltonian with linear renormalization of the momentum and mass parameters. Good results are also obtained over a more limited energy range from a single-band…
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