Anisotropic magnetoresistance in single electron transport

TL;DR

This paper investigates how magnetic anisotropy influences electron transport in a single electron transistor with ferromagnetic electrodes, highlighting the role of chemical potential variation in tuning device properties.

Contribution

It introduces the concept of chemical potential variation as a key factor in controlling electron transport based on magnetization orientation in such transistors.

Findings

Chemical potential variation depends on magnetization orientation.

Different effects arise depending on the size of chemical potential variation.

Preliminary estimates suggest measurable impacts on device behavior.

Abstract

We study the effect of magnetic anisotropy in a single electron transistor with ferromagnetic electrodes and a non-magnetic island. We identify the variation $\delta \mu$ of the chemical potential of the electrodes as a function of the magnetization orientation as a key quantity that permits to tune the electrical properties of the device. Different effects occur depending on the relative size of $\delta \mu$ and the charging energy. We provide preliminary quantitative estimates of $\delta \mu$ using a very simple toy model for the electrodes.