Electron Density Dependence of in-plane Spin Relaxation Anisotropy in GaAs/AlGaAs Two-Dimensional Electron Gas
Baoli Liu, Hongming Zhao, Jia Wang, Linsheng Liu, Wenxin Wang, Haijun, Zhu, and Dongmin Chen
TL;DR
This study explores how electron density influences in-plane spin relaxation anisotropy in GaAs/AlGaAs 2DEGs, revealing the interplay of Rashba and Dresselhaus effects through Kerr rotation measurements.
Contribution
It provides the first direct measurement of how electron density modulates Rashba spin-orbit coupling and spin relaxation anisotropy in GaAs/AlGaAs heterostructures.
Findings
In-plane spin lifetime anisotropy appears below 150K.
Electron density significantly affects Rashba spin-orbit coupling.
The ratio of in-plane spin lifetimes varies with temperature and pump power.
Abstract
We investigated the spin dynamics of two-dimensional electrons in (001) GaAs/AlGaAs heterostructure using the time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic below 150k due to the interference of Rashba and Dresselhaus spin-orbit coupling and D'yakonov-Perel' spin relaxation. The ratio of in-plane spin lifetimes is measured directly as a function of temperature and pump power, showing that the electron density in 2DEG channel strongly affects the Rashba spin-orbit coupling.
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