Photogalvanic current in artificial asymmetric nanostructures

TL;DR

This paper presents a theoretical model explaining the photogalvanic current in asymmetric nanostructures, demonstrating potential for room-temperature terahertz detectors based on electronic ratchet transport.

Contribution

It introduces a new theoretical framework for understanding photogalvanic currents in asymmetric nanostructures, validated by numerical simulations.

Findings

The theory accurately predicts numerical simulation results.

Asymmetric nanostructures can generate photogalvanic currents at high frequencies.

Potential application in room-temperature terahertz detectors.

Abstract

We develop a theoretic description of the photogalvanic current induced by a high frequency radiation in asymmetric nanostructures and show that it describes well the results of numerical simulations. Our studies allow to understand the origin of the electronic ratchet transport in such systems and show that they can be used for creation of new types of detectors operating at room temperature in a terahertz radiation range.