Thomas-Fermi Screening in Graphene
M. Salis

TL;DR
This paper investigates the static in-plane screening of a charge in graphene using a Thomas-Fermi approach, providing exact and approximate solutions and revising earlier conclusions about screening behavior.
Contribution
It introduces a self-consistent real-space Thomas-Fermi method for graphene screening and offers new insights into the potential tail dependence on carrier density.
Findings
Screened potential exhibits a tail influenced by free carrier density.
Exact and approximate solutions for the screening potential are provided.
Revised understanding of Thomas-Fermi screening in graphene.
Abstract
The in-plane static screening of the field originated by a charge placed in a graphene sheet is investigated. A self-consistent field equation in the real space domain is obtained by using a suitable Thomas-Fermi procedure. Exact and approximated (for qualitative considerations) solutions are presented. In the case of a charged sheet, the screened potential presents a tail dependent on the free carrier density whose importance is connected with the local features of the impurity system. Early conclusions about Thomas-Fermi screening in graphene are revised.
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Taxonomy
TopicsAdvanced Physical and Chemical Molecular Interactions · Surface and Thin Film Phenomena · Scientific Research and Discoveries
