Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes
B. Habib, E. Tutuc, and M. Shayegan
TL;DR
This paper reports the observation of strong Aharonov-Bohm oscillations in a GaAs two-dimensional hole system, highlighting significant quantum interference effects and potential spintronics applications.
Contribution
It presents the first measurement of strong Aharonov-Bohm oscillations in a GaAs hole ring, with detailed analysis of spin interference effects at zero magnetic field.
Findings
Oscillation amplitude reaches about 10% of ring resistance.
Resistance oscillations observed as a function of gate bias at zero magnetic field.
Results suggest potential for spintronics applications.
Abstract
We measured Aharonov-Bohm resistance oscillations in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system. In addition we observe resistance oscillations as a function of front gate bias at zero magnetic field. We discuss the results in light of spin interference in the ring and possible applications to spintronics.
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