Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

TL;DR

This study introduces a three-terminal spectroscopy method to analyze energy barriers and quantum states in buried semiconductor heterostructures, revealing detailed electronic properties and interband transitions in InAs/GaAs quantum dots.

Contribution

It demonstrates a novel experimental approach combining ballistic carrier injection and spectroscopy to probe subsurface energy barriers and quantum states in semiconductor heterostructures.

Findings

Measured barrier heights of buried AlxGa1-xAs layer.

Determined band gap of Al0.4Ga0.6As as 2.037 eV at 9 K.

Observed interband electroluminescence from quantum dots.

Abstract

A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding InAs/GaAs quantum dots (QDs) is studied. Using minority/majority carrier injection, ballistic electron emission spectroscopy and its related hot-carrier scattering spectroscopy measures barrier heights of a buried AlxGa1-xAs layer in conduction band and valence band respectively, the band gap of Al0.4Ga0.6As is therefore determined as 2.037 +/- 0.009 eV at 9 K. Under forward collector bias, interband electroluminescence is induced by the injection of minority carriers with sub-bandgap kinetic energies. Three emission peaks from InAs QDs, InAs wetting layer, and GaAs are observed in concert with minority carrier injection.