Gate tunability of stray-field-induced electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating

TL;DR

This paper demonstrates that applying a gate voltage to a GaAs/InGaAs quantum well beneath a magnetized Fe grating can tune electron spin precession frequency by 0.5 GHz/V, enabling fast control of spin dynamics.

Contribution

It introduces a method to electrically control electron spin precession frequency in a quantum well using a magnetized grating and gate voltage modulation.

Findings

Precession frequency tunability of 0.5 GHz/V achieved.

Gate modulation enables nanosecond-scale spin control.

Electron spin precession can be dynamically controlled with gigahertz frequency signals.

Abstract

Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by applying a gate voltage of opposite polarity to neighboring bars. A tunability of the precession frequency of 0.5 GHz/V has been observed. Modulating the gate potential with a gigahertz frequency allows the electron spin precession to be controlled on a nanosecond timescale.