Lithographic engineering of anisotropies in (Ga,Mn)As

TL;DR

This paper introduces a lithographic method to locally control and dominate the anisotropy in ferromagnetic semiconductors, enabling advanced device functionalities by surpassing intrinsic anisotropy effects.

Contribution

The paper presents a novel lithographic technique for patterning anisotropy in (Ga,Mn)As, allowing local control that exceeds intrinsic anisotropy at all temperatures.

Findings

Patterned anisotropy can be locally controlled in (Ga,Mn)As.

The induced anisotropy dominates over intrinsic anisotropy across all temperatures.

The method enables new device functionalities based on anisotropy engineering.

Abstract

The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures.