Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition

TL;DR

This study investigates the critical behavior of transport and magnetotransport in a 2D Si electron system near the metal-insulator transition, confirming the quantum phase transition nature through experimental data and renormalization group theory.

Contribution

The paper provides experimental validation of the CRG theory's predictions for 2D electron systems near the MIT, demonstrating good agreement over a wide range of magnetic fields.

Findings

Strong correlation between data and CRG theory in resistivity and interaction parameters.

Support for the 2D metal-insulator transition as a true quantum phase transition.

Magnetoresistance behavior consistent with theoretical predictions.

Abstract

We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with solutions of two equations of the cross-over renormalization group (CRG) theory which describes temperature evolutions of the resistivity and interaction parameters for 2D electron system. We found a good agreement between the \rho(T,B) data and the RG theory in a wide range of the in-plane fields, 0-2.1 T. This agreement supports the interpretation of the observed 2D MIT as the true quantum phase transition.