Inelastic carrier lifetime in graphene

TL;DR

This paper calculates inelastic carrier lifetimes in doped graphene considering electron-electron interactions, revealing unique energy dependence due to graphene's linear dispersion and aligning well with experimental data.

Contribution

It provides a detailed theoretical calculation of inelastic quasiparticle lifetimes in graphene using the $G_0W$ and RPA methods, highlighting the effects of linear dispersion.

Findings

Lifetime energy dependence differs from parabolic-band semiconductors.

Good agreement with angle-resolved photoemission spectroscopy data.

Provides insights into hot carrier dynamics in graphene.

Abstract

We consider hot carrier inelastic scattering due to electron--electron interactions in graphene, as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped graphene, utlizing the $G_0W$ and random phases approximations. Using the full dynamically screened Coulomb interaction, we obtain the inelastic quasiparticle lifetimes and associated mean free paths. The linear dispersion of graphene gives lifetime energy dependences that are qualitatively different from those of parabolic-band semiconductors. We also get good agreement with data from angle-resolved photoemission spectroscopy experiments.