Electronic charge reconstruction of doped Mott insulators in multilayered nanostructures

TL;DR

This paper uses dynamical mean-field theory to study how electronic charge redistributes in multilayered nanostructures with doped Mott insulators, revealing the formation of well-defined insulating regions influenced by material properties.

Contribution

It demonstrates how charge reconstruction in multilayered devices can create reproducible Mott insulating regions based on intrinsic material characteristics.

Findings

Charge redistribution can produce stable Mott insulating regions.

The insulating regions' properties depend on the intrinsic material parameters.

Reproducible device fabrication is feasible through intrinsic material control.

Abstract

Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made.