EL2--like defects in InP nanowires
R.H. Miwa, T.M. Schmidt, and A. Fazzio

TL;DR
This study uses density functional theory to investigate antisite defects in InP nanowires, revealing how defect formation energies, dissociation energies, and EL2-like defect occurrence depend on nanowire diameter.
Contribution
It provides the first detailed ab initio analysis of antisite defect behavior and EL2-like defect formation in InP nanowires as a function of diameter.
Findings
P antisites are more likely than In antisites in InP nanowires.
EL2-like defects appear only in thicker nanowires with diameters around 18 Å.
Dissociation energies for P$_{ m In}$--P defects increase with nanowire diameter.
Abstract
We have performed an {\it ab initio} total energy investigation, within the density functional theory (DFT), of antisite defects in InP nanowires (InPs) grown along the [111] direction. Our total energy results indicate that, (i) P antisites (P) are the most likely antisite defect compared with In antisites (In), and (ii) the formation energies of P and In antisites do not depend on the diameter. In particular, thin InPs, diameters of 13 \AA, the P antisite exhibits a trigonal symmetry, lying at 0.15 \AA from the site, followed by a metastable configuration with P in an interstitial position (1.15 \AA from the site). We find a P--P dissociation energy of 0.33 eV, and there is no EL2--like center for such a thin InP. However, EL2--like defects occur by increasing the diameter. For diameters of…
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Taxonomy
TopicsNanowire Synthesis and Applications · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
