A multiband envelope function model for quantum transport in a tunneling diode

TL;DR

This paper introduces a multiband envelope function model for quantum electron transport in tunneling diodes, capturing interband tunneling effects with a set of coupled equations derived from the Bloch-Wannier formalism.

Contribution

It develops a new multiband envelope function model based on a k-expansion, connecting it with existing models and demonstrating its effectiveness in simulating tunneling diode behavior.

Findings

Successfully reproduces current-voltage characteristics of resonant interband tunneling diodes.

Provides a simplified yet accurate framework for modeling quantum tunneling in semiconductor devices.

Connects the envelope function approach with established theoretical models.

Abstract

We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in terms of a set of coupled equations for the electron envelope functions. Its connection with other models present in literature is discussed. As an application we consider the case of a Resonant Interband Tunneling Diode, demonstrating the ability of the model to reproduce the expected behaviour of the current as a function of the applied voltage