Microstructure of strained La2CuO4+delta thin films on varied sub-strates

TL;DR

This study investigates the microstructure, defects, and strain relaxation mechanisms in La2CuO4+delta thin films grown on different substrates using advanced microscopy techniques.

Contribution

It provides detailed analysis of defect types, strain states, and a novel observation of a rhombohedral LaCuO2 layer in high-temperature grown films.

Findings

High epitaxial quality with flat interfaces

Presence of misfit dislocations and shear defects

Identification of a LaCuO2 layer at high growth temperature

Abstract

Layered perovskite La2CuO4+delta(LCO) thin films were epitaxially grown on SrTiO3 (STO) and LaSrAlO4 (LSAO) substrates by atomic-layer-by-layer molecular beam epitaxy. The lattice de-fects and residual strain in these films were investigated by means of transmission electron mi-croscopy and electron energy loss spectroscopy. The LCO films showed a high epitaxial quality with flat interfaces and top surfaces. Misfit dislocations with Burgers vector a<010> and shear defects were frequently observed at or near the film/substrate interfaces and in the films, respec-tively, for all the LCO films. In one LCO film, grown on STO at the highest temperature, 700 oC, was a two layered structure. The top layer was identified as rhombohedral LaCuO2 by electron energy loss spectroscopy combined with electron diffraction. In addition, stacking faults were observed in plane-view micrographs of one LCO film grown on the STO substrate. The residual strains were evaluated from the spacing of misfit dislocations at the film/substrate interface and from the split electron diffraction patterns. Possible mechanisms of strain relaxations are dis-cussed based on the observed defects.