Lithography-Free Fabrication of Graphene Devices

TL;DR

This paper introduces a contamination-free, lithography-free method for fabricating graphene devices using a quartz shadow mask, enabling cleaner electrical and tunneling studies of multilayer graphene.

Contribution

The authors present a novel all-dry, lithography-free fabrication technique for graphene devices that reduces contamination and allows for high-quality electrical measurements.

Findings

Observation of localization behavior in graphene

Detection of reduced density of states near Fermi energy

Successful fabrication of multilayer graphene devices

Abstract

We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to prepare devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1, 2, 3 and higher. We observed localization behavior and an apparent reduction of density of states (DOS) near the Fermi energy in nLG.