Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films
H. Schneider, Ch. Herbort, G. Jakob, H. Adrian, S. Wurmehl, and C., Felser

TL;DR
This study reports the successful fabrication and characterization of epitaxial Co$_2$FeSi Heusler films, revealing their structural, magnetic, and transport properties, including magnetization, resistivity behavior, and Hall effect characteristics.
Contribution
First demonstration of epitaxial growth of Co$_2$FeSi films with detailed analysis of their magnetic and transport properties.
Findings
Epitaxial (100) growth on MgO(100) with L2$_1$ order.
Saturation magnetization of 5.0 μ_B/f.u. at low temperatures.
Resistivity shows a crossover from T^3.5 to T^1.65 behavior with temperature.
Abstract
We report the deposition of thin CoFeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2 ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on AlO(110) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 at low temperatures. The temperature dependence of the resistivity exhibits a crossover from a T^3.5 law at T<50K to a T^1.65 behaviour at elevated temperatures. shows a small anisotropic magnetoresistive effect. A weak dependence of the normal Hall effect on the external magnetic field indicates the compensation of electron and hole like contributions at the Fermi surface.
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