Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As
H.G. Roberts, S. Crampin, and S.J. Bending
TL;DR
This paper shows that anisotropic magnetoresistance significantly affects the measured domain wall resistance in in-plane magnetized (Ga,Mn)As, explaining previously observed negative resistance values.
Contribution
It identifies and quantifies the anisotropic magnetoresistance contribution to domain wall resistance in (Ga,Mn)As, which was previously overlooked.
Findings
Anisotropic magnetoresistance accounts for most of the negative domain wall resistance.
Analytic and numerical models confirm the contribution's significance.
The results clarify the interpretation of domain wall resistance measurements.
Abstract
We demonstrate the presence of an important anisotropic magnetoresistance contribution to the domain wall resistance recently measured in thin-film (Ga,Mn)As with in-plane magnetic anisotropy. Analytic results for simple domain wall orientations supplemented by numerical results for more general cases show this previously omitted contribution can largely explain the observed negative resistance.
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