Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor

TL;DR

This study investigates how energy is transferred between hole gases and the crystal lattice in ferromagnetic semiconductors, focusing on temperature-dependent rates in MnGaAs samples with different manganese concentrations.

Contribution

It provides experimental data on energy transfer rates in ferromagnetic semiconductors, highlighting the effects of manganese doping levels.

Findings

Energy transfer rates vary with temperature.

Higher manganese concentration slightly increases Curie temperature.

Experimental data supports models of carrier-lattice interactions.

Abstract

The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from temperatures of peak resistivities were 60 K and 62 K, respectively.