GaN and InN nanowires grown by MBE: a comparison

TL;DR

This paper compares the growth, optical, and transport properties of GaN and InN nanowires grown by MBE, highlighting differences in growth parameters, crystalline quality, and electronic band structures.

Contribution

It provides a detailed comparison of GaN and InN nanowires grown by MBE, emphasizing differences in growth optimization, optical properties, and transport characteristics.

Findings

GaN and InN nanowires show distinct optical and transport behaviors.

Crystalline quality varies between GaN and InN nanowires.

Band structures considering Fermi level pinning are presented for both materials.

Abstract

Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. For each material a band schema was shown, which takes into account transport and optical features and is based on Fermi level pinning at the surface.