Evidence of defect phase formation in solid Xe induced by synchrotron radiation
N.Yu. Masalitina, O.N. Bliznjuk, A.N. Ogurtsov

TL;DR
This paper reports the first observation of defect phase formation in solid xenon caused by synchrotron radiation, using luminescence intensity changes over time as evidence.
Contribution
It introduces a novel experimental approach to detect defect phases in solid Xe induced by synchrotron radiation.
Findings
Detection of defect phase formation in solid Xe
Use of luminescence intensity as a time-dependent indicator
First experimental evidence of this phenomenon
Abstract
The growing of defect phase in solid Xe induced by synchrotron radiation is observed for the first time using the dependence of intensity on time of characteristic intrinsic luminescence band.
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Taxonomy
TopicsPhase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
