Electronic structure and magnetism in doped semiconducting half-Heusler compounds

TL;DR

This study investigates the electronic structure and magnetism in doped half-Heusler compounds, revealing some are ferromagnetic and half-metallic, with potential for spintronics, based on detailed first-principles calculations.

Contribution

It provides a comprehensive analysis of how transition metal doping influences magnetism and electronic properties in semiconducting half-Heusler compounds, introducing a simple interaction model.

Findings

Some doped compounds are ferromagnetic and half-metallic.

Strong X-d and M-d interactions influence electronic states.

Mn-doped NiTiSn shows a high Curie temperature potential.

Abstract

We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XM$_{x}$Y$_{1-x}$Z) in a wide concentration range using local-spin density functional method in the framework of tight-binding linearized muffin tin orbital method(TB-LMTO) and supercell approach. Our calculations indicate that some of these compounds are not only ferromagnetic but also half-metallic and may be useful for spintronics applications. The electronic structure of the doped systems is analyzed with the aid of a simple model where we have considered the interaction between the dopant transition metal (M) and the valence band X-Z hybrid. We have shown that the strong X-d - M-d interaction places the M-d states close to the Fermi level with the M-t$_{2g}$ states lying higher in energy in comparison to the M-e$_{g}$ states. Depending on the number of available d-electrons, ferromagnetism is realized provided the d-manifold is partially occupied. The tendencies toward ferromagnetic(FM) or antiferromagnetic(AFM) behavior are discussed within Anderson-Hasegawa models of super-exchange and double-exchange. In our calculations for Mn doped NiTiSn, the strong preference for FM over AFM ordering suggests a possible high Curie temperature for these systems.