Characterization of Disorder in Semiconductors via Single-Photon Interferometry

TL;DR

This paper introduces a purely optical method using angular photonic correlations of spontaneous emission to directly characterize disorder in semiconductor nanostructures, providing insights into the spatial distribution of states.

Contribution

It presents a new experimental scheme and theoretical framework for analyzing disorder in semiconductors through single-photon interferometry.

Findings

Theoretical expression for angular correlations derived.

Numerical evaluation demonstrates method's effectiveness.

Provides direct information on spatial distribution of states.

Abstract

The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.