Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
J. Moser, A. Matos-Abiague, D. Schuh, W. Wegscheider, J. Fabian, D., Weiss
TL;DR
This paper reports the observation of TAMR in Fe/GaAs/Au tunnel junctions, demonstrating bias-controlled anisotropy due to interface spin-orbit coupling, supported by model calculations.
Contribution
It provides experimental evidence of TAMR in epitaxial Fe/GaAs/Au junctions and links the effect to interface spin-orbit coupling with theoretical modeling.
Findings
TAMR exhibits two-fold anisotropy in resistance.
Bias voltage reversal switches the anisotropy.
Model calculations align with experimental results.
Abstract
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.
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