Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

TL;DR

This study demonstrates spin transport through a single InAs quantum dot with ferromagnetic leads, showing gate-dependent tunnel magnetoresistance effects, advancing understanding of spintronic behavior in quantum dot systems.

Contribution

First demonstration of spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads, revealing gate-tunable TMR effects.

Findings

Clear hysteretic TMR observed, indicating spin transport.

TMR ratio varies with gate voltage.

Gate voltage influences TMR curve shapes.

Abstract

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.