Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures

TL;DR

This paper demonstrates that sputtered gold can serve as an effective Schottky gate for strained Si/SiGe nanostructures, enabling low-voltage depletion of 2DEG with minimal leakage, and introduces a fabrication process for sub-micron electrodes.

Contribution

It presents a novel sputtering technique for gold Schottky gates on Si/SiGe, eliminating the need for wetting layers and improving device performance.

Findings

Low-voltage depletion of 2DEG achieved

Minimal leakage current maintained

Sub-micron gold electrodes successfully fabricated

Abstract

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of sub-micron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.