Unusual field and temperature dependence of Hall effect in graphene

TL;DR

This paper investigates the unusual temperature and magnetic field dependence of the Hall effect in graphene, revealing anomalous behaviors and divergence in mobility under certain conditions.

Contribution

It provides a detailed theoretical analysis of the Hall conductivity and mobility in graphene considering defect and phonon scattering, highlighting novel temperature and field effects.

Findings

Hall resistivity varies almost linearly with temperature

Resistivity shows a square root dependence on magnetic field

Hall mobility diverges logarithmically at low doping

Abstract

We calculate the classic Hall conductivity and mobility of the undoped and doped (or in the gate voltage) graphene as a function of temperature, magnetic field, and carrier concentration. Carrier collisions with defects and acoustic phonons are taken into account. The Hall resistivity varies almost linearly with temperature. The magnetic field dependence of resistivity and mobility is anomalous in weak magnetic fields. There is the square root contribution from the field in the resistivity. The Hall mobility diverges logarithmically with the field for low doping.