Field-effect transistors assembled from functionalized carbon nanotubes

TL;DR

This paper presents a new method for assembling high-performance field-effect transistors using functionalized carbon nanotubes that selectively bind to metal oxide surfaces and can be restored to pristine form after annealing.

Contribution

It introduces a novel selective placement technique for carbon nanotube transistors using hydroxamic acid functionalization for improved device fabrication.

Findings

Devices exhibit excellent electrical characteristics

Functionalization allows selective binding to metal oxides

Annealing restores nanotube properties

Abstract

We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices we have fabricated show excellent electrical characteristics.