Impurity-assisted tunneling in graphene
M. Titov

TL;DR
This paper investigates how impurity-assisted resonant tunneling enhances electrical conductance in undoped graphene with smooth disorder, revealing the resonant nature and effects of disorder fluctuations.
Contribution
It introduces a transfer matrix approach to demonstrate resonant tunneling effects and models the impact of disorder fluctuations on conductivity in graphene.
Findings
Conductance increases due to impurity-assisted resonant tunneling.
Resonant character of conductivity enhancement is demonstrated.
Disorder fluctuations influence two-terminal conductivity.
Abstract
The electric conductance of a strip of undoped graphene increases in the presence of a disorder potential, which is smooth on atomic scales. The phenomenon is attributed to impurity-assisted resonant tunneling of massless Dirac fermions. Employing the transfer matrix approach we demonstrate the resonant character of the conductivity enhancement in the presence of a single impurity. We also calculate the two-terminal conductivity for the model with one-dimensional fluctuations of disorder potential by a mapping onto a problem of Anderson localization.
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