Non-Gaussian conductance noise in disordered electronic systems due to a non-linear mechanism
V. Orlyanchik, V. I. Kozub, and Z. Ovadyahu

TL;DR
This study investigates non-Gaussian conductance noise in disordered indium oxide films, revealing size-dependent noise characteristics and a non-linear bias dependence, explained by a model of non-linear effects in hopping transport.
Contribution
It demonstrates the presence of non-Gaussian noise in disordered systems and introduces a model linking this behavior to intrinsic non-linear transport mechanisms.
Findings
Noise magnitude scales with inverse sample volume.
Non-Gaussianity depends non-trivially on bias voltage.
A model explains the non-linear effects in hopping conduction.
Abstract
We present results of conductance-noise experiments on disordered films of crystalline indium oxide with lateral dimensions 2microns to 1mm. The power-spectrum of the noise has the usual 1/f form, and its magnitude increases with inverse sample-volume down to sample size of 2microns, a behavior consistent with un-correlated fluctuators. A colored second spectrum is only occasionally encountered (in samples smaller than 40microns), and the lack of systematic dependence of non-Gaussianity on sample parameters persisted down to the smallest samples studied (2microns). Moreover, it turns out that the degree of non-Gaussianity exhibits a non-trivial dependence on the bias V used in the measurements; it initially increases with V then, when the bias is deeper into the non-linear transport regime it decreases with V. We describe a model that reproduces the main observed features and argue that…
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